AUIRF1405ZS
MOSFET N-CH 55V 150A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF1405ZS is an N-Channel Power MOSFET from the HEXFET® series. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 150A at 25°C. With a low on-resistance of 4.9mOhm at 75A and 10V, it offers efficient power handling. The AUIRF1405ZS is rated for a maximum power dissipation of 230W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a Gate Charge (Qg) of 180 nC @ 10V and Input Capacitance (Ciss) of 4780 pF @ 25V. This device is supplied in a surface mount D2PAK package (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) and is typically used in automotive and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
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