AUIRF1405ZL
MOSFET N-CH 55V 150A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF1405ZL is an N-Channel HEXFET® power MOSFET designed for high-efficiency power conversion applications. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 150A at 25°C case temperature, with a maximum power dissipation of 230W. The device exhibits a low on-resistance (Rds On) of 4.9mOhm at 75A and 10V gate-to-source voltage (Vgs). Key parameters include a gate charge (Qg) of 180 nC at 10V Vgs and input capacitance (Ciss) of 4780 pF at 25V Vds. The AUIRF1405ZL is configured for through-hole mounting in a TO-262 package and operates within a temperature range of -55°C to 175°C. This MOSFET is commonly employed in automotive, industrial, and power supply designs requiring robust performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
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