AUIRF1404ZSTRL
MOSFET N-CH 40V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF1404ZSTRL is an N-Channel HEXFET® power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 160A at 25°C, with a maximum power dissipation of 200W. The AUIRF1404ZSTRL exhibits a low on-resistance (Rds On) of 3.7mOhm at 75A and 10V, facilitated by its 10V drive voltage. Key parameters include a Gate Charge (Qg) of 150 nC at 10V and an input capacitance (Ciss) of 4340 pF at 25V. This device is housed in a TO-263AB (D2PAK) surface-mount package, supplied on tape and reel (TR), and operates across a temperature range of -55°C to 175°C. Its robust characteristics make it suitable for use in automotive and industrial power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AB (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
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