AUIRF1404ZL
MOSFET N-CH 40V 160A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF1404ZL is an N-channel Power MOSFET with a drain-source voltage (Vdss) of 40V. This device offers a continuous drain current (Id) of 160A at 25°C (Tc) and a maximum power dissipation of 200W (Tc). Featuring a low on-resistance (Rds On) of 3.7mOhm at 75A and 10V, it is designed for high-efficiency power switching applications. The gate charge (Qg) is 150 nC at 10V, and input capacitance (Ciss) is 4340 pF at 25V. The AUIRF1404ZL is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
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