AUIRF1404Z
MOSFET N-CH 40V 160A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF1404Z is an N-channel power MOSFET designed for high-performance applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 160A at 25°C. With a low on-resistance (Rds On) of 3.7mOhm at 75A and 10V gate-source voltage (Vgs), it offers efficient power management. The device boasts a maximum power dissipation of 200W (Tc) and a gate charge (Qg) of 150 nC at 10V. Its TO-220AB package with through-hole mounting is suitable for demanding thermal environments. The AUIRF1404Z is utilized across various industries including automotive, industrial power supplies, and motor control, where robust power switching is critical. It operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
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