AUIRF1324WL
MOSFET N-CH 24V 240A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF1324WL is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 24V and a continuous Drain Current (Id) of 240A at 25°C, with a maximum power dissipation of 300W. The low on-resistance of 1.3mOhm at 195A and 10V drive voltage, coupled with a typical Gate Charge (Qg) of 180 nC, ensures efficient switching performance. Operating across a temperature range of -55°C to 175°C, the AUIRF1324WL is housed in a TO-262-3 Wide package, suitable for through-hole mounting. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Wide Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 Wide |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7630 pF @ 19 V |
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