AUIRF1324S-7P
MOSFET N-CH 24V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF1324S-7P is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a low Rds(on) of 1mOhm at 160A and 10V, ensuring efficient power transfer. With a continuous drain current capability of 240A (Tc) and a drain-source voltage of 24V, it is suitable for power conversion, motor control, and automotive power switching. The surface mount D2PAK (7-Lead) package offers excellent thermal performance and ease of assembly. Key parameters include a gate charge of 252 nC @ 10V and input capacitance of 7700 pF @ 19V. This MOSFET utilizes advanced trench technology for optimized performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 160A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 252 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 19 V |
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