AUIRF1324
MOSFET N-CH 24V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the AUIRF1324, an N-Channel HEXFET® Power MOSFET. This component offers a Drain-Source Voltage (Vdss) of 24V and commands a continuous Drain Current (Id) of 195A at 25°C, with a maximum power dissipation of 300W at the same temperature. The device features a low on-resistance (Rds On) of 1.5mOhm at 195A and 10V. Its gate charge (Qg) is 240 nC at 10V, and input capacitance (Ciss) is 7590 pF at 24V. The AUIRF1324 is housed in a TO-220AB package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This MOSFET is suitable for applications in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7590 pF @ 24 V |
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