AUIRF1018E
MOSFET N-CH 60V 79A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRF1018E is an N-Channel HEXFET® power MOSFET designed for high-performance applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 79A at 25°C (Tc). The low on-resistance of 8.4mOhm at 47A and 10V (Rds On) minimizes conduction losses. With a maximum power dissipation of 110W (Tc), the AUIRF1018E is suitable for demanding power management tasks. The TO-220AB package with through-hole mounting facilitates integration into various circuit designs. Key electrical parameters include a gate charge (Qg) of 69 nC at 10V and input capacitance (Ciss) of 2290 pF at 50V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET finds application in automotive, industrial power control, and high-efficiency power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 47A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 50 V |
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