AUIRF1010ZSTRL
MOSFET N-CH 55V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF1010ZSTRL: A high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source voltage and a continuous drain current capability of 75A at 25°C. The low on-resistance of 7.5mOhm at 75A and 10V, combined with a maximum power dissipation of 140W (Tc), ensures efficient operation. Key parameters include gate charge of 95 nC (max) at 10V and input capacitance of 2840 pF (max) at 25V. The device is housed in a PG-TO263-3 (D2PAK) surface mount package, suitable for high-density board designs. Operating temperature ranges from -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
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