AUIRF1010ZS
MOSFET N-CH 55V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRF1010ZS is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C. The AUIRF1010ZS exhibits a low on-resistance (Rds On) of 7.5mOhm at 75A and 10V, ensuring high efficiency. With a maximum power dissipation of 140W (Tc), it is suitable for high-power switching environments. The device is packaged in a TO-263-3, D2PAK surface mount configuration, facilitating integration into compact designs. Key electrical characteristics include a gate charge (Qg) of 95 nC at 10V and an input capacitance (Ciss) of 2840 pF at 25V. This MOSFET is utilized in automotive and industrial power systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
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