AUIRF1010EZSTRL
MOSFET N-CH 60V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFI1010EZSTRL is a HEXFET® N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 75A at 25°C (Tc), with a maximum continuous power dissipation of 140W (Tc). The low on-resistance of 8.5mOhm at 51A and 10V gate drive voltage minimizes conduction losses.
Key electrical parameters include a gate charge (Qg) of 86 nC at 10V and input capacitance (Ciss) of 2810 pF at 25V. The MOSFET is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, suitable for automated assembly. Operating temperature ranges from -55°C to 175°C (TJ), accommodating demanding thermal environments. This component is widely utilized in automotive and industrial power management systems. The device is supplied on tape and reel for high-volume manufacturing.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 25 V |
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