AIMZHN120R120M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel SiCFET, part number AIMZHN120R120M1TXKSA1, features a 1200 V drain-source voltage and 22 A continuous drain current at 25°C. This through-hole component, housed in a PG-TO247-4-14 package, offers a maximum power dissipation of 133 W at the case temperature. The Rds On is specified at 150 mOhm maximum for an Id of 7 A and Vgs of 20 V. Gate charge (Qg) is 18 nC maximum at 20 V, with input capacitance (Ciss) at 458 pF maximum at 800 V. The device operates across a temperature range of -55°C to 175°C and is qualified to AEC-Q101, indicating its suitability for automotive applications. This component leverages Silicon Carbide technology for enhanced performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 7A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 133W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 2.2mA |
| Supplier Device Package | PG-TO247-4-14 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 458 pF @ 800 V |
| Qualification | AEC-Q101 |
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