AIMZHN120R080M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel SiCFET, part number AIMZHN120R080M1TXKSA1, offers a 1200 V drain-source voltage with a continuous drain current of 31 A at 25°C (Tc). This through-hole component features a maximum power dissipation of 169 W (Tc) and a low on-resistance of 100 mOhm at 10 A, 20 Vgs. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C (TJ). The gate charge is 24 nC at 20 Vgs, with input capacitance at 671 pF for 800 Vds. The package is a PG-TO247-4-14, and this device is AEC-Q101 qualified, indicating suitability for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 169W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 3.3mA |
| Supplier Device Package | PG-TO247-4-14 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 671 pF @ 800 V |
| Qualification | AEC-Q101 |
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