AIMZHN120R060M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel SiCFET, Part Number AIMZHN120R060M1TXKSA1, offers a 1200 V drain to source voltage and a continuous drain current of 38A at 25°C (Tc). This through-hole component features a maximum power dissipation of 197W (Tc) and a low on-resistance of 75mOhm at 13A and 20V gate drive. Designed with Silicon Carbide technology, it operates across a wide temperature range of -55°C to 175°C. The AIMZHN120R060M1TXKSA1 is housed in a PG-TO247-4-14 package and meets AEC-Q101 qualification, making it suitable for automotive applications. Key parameters include a gate charge of 32 nC at 20V and input capacitance of 880 pF at 800V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 13A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 197W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 4.3mA |
| Supplier Device Package | PG-TO247-4-14 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 800 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
SPP11N60S5XKSA1
LOW POWER_LEGACY
IPB160N04S2L03ATMA1
MOSFET N-CH 40V 160A TO263-7
AUIRFR3607TRL
MOSFET N-CH 75V 80A DPAK
