AIMZHN120R040M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the AIMZHN120R040M1TXKSA1, an N-Channel Silicon Carbide (SiC) power MOSFET. This through-hole component offers a robust 1200 V drain-source voltage (Vdss) and a continuous drain current (Id) of 55A at 25°C. Engineered for high-power applications, it features a low on-resistance (Rds On) of 50mOhm at 20A and 20V, with a maximum power dissipation of 268W (Tc). Key parameters include a gate charge (Qg) of 43 nC @ 20 V and input capacitance (Ciss) of 1264 pF @ 800 V. The device operates within a junction temperature range of -55°C to 175°C and is qualified to AEC-Q101, making it suitable for automotive and other demanding environments. The package is PG-TO247-4-14.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 268W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 6.4mA |
| Supplier Device Package | PG-TO247-4-14 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1264 pF @ 800 V |
| Qualification | AEC-Q101 |
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