AIMZHN120R020M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AIMZHN120R020M1TXKSA1 is an N-Channel Silicon Carbide MOSFET designed for high-power applications. This discrete component features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 100 A at 25°C. The Rds On is specified at a maximum of 25 mOhm at 43 A and 20 V gate-source voltage. With a maximum power dissipation of 429 W at 25°C, this device is suitable for demanding thermal environments. The gate charge (Qg) is 82 nC at 20 V, and input capacitance (Ciss) is 2667 pF at 800 V. The AIMZHN120R020M1TXKSA1 is housed in a PG-TO247-4-14 package, enabling through-hole mounting. This component is rated for automotive applications and meets AEC-Q101 qualification. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 43A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 429W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 13.7mA |
| Supplier Device Package | PG-TO247-4-14 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2667 pF @ 800 V |
| Qualification | AEC-Q101 |
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