AIMZHN120R010M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel Silicon Carbide (SiC) MOSFET, part number AIMZHN120R010M1TXKSA1, offers a 1200 V drain-source voltage with a continuous drain current rating of 202 A at 25°C (Tc) and a maximum power dissipation of 750 W (Tc). This through-hole device features a low on-resistance of 11.3 mOhm at 93 A and 20 V Vgs. The AIMZHN120R010M1TXKSA1 utilizes SiC technology for enhanced performance and is supplied in a PG-TO247-4-14 package. Gate drive requirements range from 18V to 20V for maximum Rds On, with maximum gate-source voltage limits of +23V and -5V. Input capacitance (Ciss) is a maximum of 5703 pF at 800 V, and gate charge (Qg) is 178 nC at 20 V. This component is AEC-Q101 qualified and operates across a temperature range of -55°C to 175°C (TJ). Applications include automotive power systems and other high-voltage, high-efficiency power conversion designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 202A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 93A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 750W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 30mA |
| Supplier Device Package | PG-TO247-4-14 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5703 pF @ 800 V |
| Qualification | AEC-Q101 |
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