AIMZH120R060M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AIMZH120R060M1TXKSA1 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. This discrete power component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) of 38 A at 25°C, with a maximum power dissipation of 197 W (Tc). The device boasts a low on-resistance (Rds On) of 75 mOhm at 13 A and 20 V gate-source voltage. Key parameters include a gate charge (Qg) of 32 nC @ 20 V and input capacitance (Ciss) of 880 pF @ 800 V. The AIMZH120R060M1TXKSA1 utilizes the PG-TO247-4-11 package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. Qualified to AEC-Q101 and featuring an automotive grade, this SiC MOSFET is suitable for power conversion systems in electric vehicles, industrial power supplies, and renewable energy infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 13A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 197W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 4.3mA |
| Supplier Device Package | PG-TO247-4-11 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 800 V |
| Qualification | AEC-Q101 |
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