AIMZH120R030M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AIMZH120R030M1TXKSA1 is an N-Channel Silicon Carbide (SiC) power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 69 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 38 mOhm at 27 A and 20 V, it offers excellent conduction efficiency. The device boasts a high power dissipation capability of 326 W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 57 nC at 20 V and input capacitance (Ciss) of 1738 pF at 800 V. Mounting is through hole in a PG-TO247-4-11 package. This component is qualified to AEC-Q101 standards, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 27A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 326W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
| Supplier Device Package | PG-TO247-4-11 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1738 pF @ 800 V |
| Qualification | AEC-Q101 |
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