AIMZH120R020M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AIMZH120R020M1TXKSA1 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. This discrete component offers a robust 1200 V drain-source voltage rating and a continuous drain current capability of 100 A at 25°C, with a maximum power dissipation of 429 W. Featuring low on-resistance of 25 mOhm at 43 A and 20 V, it utilizes SiCFET technology for enhanced efficiency and thermal performance. The device is packaged in a PG-TO247-4-11 through-hole configuration and is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power conversion systems. Key parameters include a maximum gate charge of 82 nC and input capacitance of 2667 pF. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 43A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 429W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 13.7mA |
| Supplier Device Package | PG-TO247-4-11 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2667 pF @ 800 V |
| Qualification | AEC-Q101 |
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