AIMZH120R010M1TXKSA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AIMZH120R010M1TXKSA1 is an N-Channel SiCFET with a drain-source voltage of 1200V. This component offers a continuous drain current of 202A at 25°C (Tc) and a maximum power dissipation of 750W (Tc). The Rds On is specified at 11.3mOhm maximum at 93A and 20V gate-source voltage. Featuring a gate charge of 178 nC maximum at 20V, this device utilizes TO-247-4 packaging with through-hole mounting. Designed with automotive grade qualification (AEC-Q101), the AIMZH120R010M1TXKSA1 is suitable for demanding applications in the automotive and industrial sectors. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 202A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 93A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 750W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 30mA |
| Supplier Device Package | PG-TO247-4-11 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5703 pF @ 800 V |
| Qualification | AEC-Q101 |
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