AIMW120R080M1XKSA1
1200V COOLSIC MOSFET PG-TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolSiC™ AIMW120R080M1XKSA1 is a 1200V N-channel Silicon Carbide MOSFET. This device features a drain-source breakdown voltage of 1200V and a continuous drain current of 33A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The MOSFET offers a low on-resistance of 104mOhm at 13A and 15V Vgs, and a gate charge of 28 nC at 15V. It is housed in a PG-TO247-3-41 package suitable for through-hole mounting and operates across an extended temperature range of -55°C to 175°C (TJ). The device is qualified to AEC-Q101 standards, making it suitable for automotive applications. Additional parameters include a gate-source voltage range of +20V to -7V and a threshold voltage of 5.7V.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 13A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 5.6mA |
| Supplier Device Package | PG-TO247-3-41 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +20V, -7V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 800 V |
| Qualification | AEC-Q101 |
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