AIMW120R060M1HXKSA1
1200V COOLSIC MOSFET PG-TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AIMW120R060M1HXKSA1 is a 1200V N-Channel Silicon Carbide (SiC) MOSFET from the CoolSiC™ series. This device features a continuous drain current of 36A at 25°C (Tc) and a maximum power dissipation of 150W (Tc). With a drain-to-source voltage (Vdss) of 1200V and a low on-resistance of 78mOhm (max) at 13A and 18V, it offers efficient switching performance. The gate charge (Qg) is 31 nC (max) at 18V, and input capacitance (Ciss) is 1060 pF (max) at 800V. Designed for demanding applications, it operates across a temperature range of -55°C to 175°C (TJ). This AEC-Q101 qualified component is housed in a PG-TO247-3-41 package for through-hole mounting and is suitable for the automotive industry.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 5.6mA |
| Supplier Device Package | PG-TO247-3-41 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +23V, -7V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 800 V |
| Qualification | AEC-Q101 |
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