AIMW120R035M1HXKSA1
1200V COOLSIC MOSFET PG-TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolSiC™ N-Channel Power MOSFET, part number AIMW120R035M1HXKSA1, features a 1200V drain-source voltage and 52A continuous drain current at 25°C. This SiCFET technology offers a low on-resistance of 46mOhm at 25A and 18V gate-source voltage, with a maximum power dissipation of 228W. The device has a gate charge of 59 nC at 18V and an input capacitance of 2130 pF at 800V. Designed for through-hole mounting, it is housed in a PG-TO247-3 package. Operating temperature ranges from -55°C to 175°C (TJ). This component is qualified to AEC-Q101 standards and is suitable for automotive applications.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 25A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 228W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |
| Supplier Device Package | PG-TO247-3-41 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +23V, -7V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 800 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
