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AIMCQ120R080M1TXTMA1

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AIMCQ120R080M1TXTMA1

SIC_DISCRETE

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies presents the AIMCQ120R080M1TXTMA1, an N-Channel Silicon Carbide (SiC) MOSFET from the CoolSiC™ series. This discrete component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 34 A at 25°C (Tc), with a maximum power dissipation of 211 W (Tc). Designed for demanding applications, it offers a low on-resistance (Rds On) of 100 mOhm at 10 A and 20 Vgs. The device is housed in a PG-HDSOP-22 package suitable for surface mounting and meets AEC-Q101 qualification, making it suitable for automotive and industrial power conversion systems. Key parameters include a maximum gate charge (Qg) of 24 nC at 20 V and input capacitance (Ciss) of 671 pF at 800 V. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / Case22-PowerBSOP Module
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 10A, 20V
FET Feature-
Power Dissipation (Max)211W (Tc)
Vgs(th) (Max) @ Id5.1V @ 3.3mA
Supplier Device PackagePG-HDSOP-22
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds671 pF @ 800 V
QualificationAEC-Q101

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