AIMCQ120R060M1TXTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolSiC™ N-Channel MOSFET, part number AIMCQ120R060M1TXTMA1, offers a 1200 V drain-source voltage and a continuous drain current of 44 A at 25°C (Tc). This SiC junction transistor features a low on-resistance of 75 mOhm maximum at 13 A and 20 Vgs. The component is housed in a PG-HDSOP-22 package with a surface mount configuration, suitable for demanding applications. Key parameters include a maximum power dissipation of 259 W (Tc), a gate charge of 32 nC at 20 V, and an input capacitance of 880 pF at 800 V. Operating over a temperature range of -55°C to 175°C (TJ), this AEC-Q101 qualified device is designed for automotive applications. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 22-PowerBSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 13A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 259W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 4.3mA |
| Supplier Device Package | PG-HDSOP-22 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 800 V |
| Qualification | AEC-Q101 |
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