AIMCQ120R040M1TXTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolSiC™ AIMCQ120R040M1TXTMA1, a discrete N-channel Silicon Carbide (SiC) MOSFET, offers a 1200 V drain-source voltage and 61 A continuous drain current at 25°C (Tc). This AEC-Q101 qualified component features a low on-resistance of 50 mOhm maximum at 20 A, 20 V, and a maximum gate charge of 43 nC at 20 V. Designed for surface mounting, it utilizes the PG-HDSOP-22 package for efficient thermal management, dissipating up to 341 W (Tc). The device operates across a wide temperature range of -55°C to 175°C (TJ). Its SiC technology makes it suitable for demanding applications in the automotive sector.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 22-PowerBSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 6.4mA |
| Supplier Device Package | PG-HDSOP-22 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1264 pF @ 800 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
IMBF170R650M1XTMA1
SICFET N-CH 1700V 7.4A TO263-7
