AIMCQ120R030M1TXTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolSiC™ AIMCQ120R030M1TXTMA1 is an N-Channel Silicon Carbide MOSFET designed for high-performance power applications. This device features a 1200 V drain-source voltage and a continuous drain current of 78 A at 25°C (Tc), with a maximum power dissipation of 417 W (Tc). The Rds On is rated at a maximum of 38 mOhm at 27 A and 20 V Vgs. The gate charge (Qg) is 57 nC at 20 V and input capacitance (Ciss) is 1738 pF at 800 V. This AEC-Q101 qualified component is packaged in a PG-HDSOP-22 (22-PowerBSOP Module) and supplied in Tape & Reel (TR). Its operating temperature range is -55°C to 175°C (TJ). The AIMCQ120R030M1TXTMA1 is suitable for demanding automotive power conversion systems.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 22-PowerBSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 27A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
| Supplier Device Package | PG-HDSOP-22 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1738 pF @ 800 V |
| Qualification | AEC-Q101 |
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