AIMCQ120R020M1TXTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolSiC™ N-Channel MOSFET, part number AIMCQ120R020M1TXTMA1, is a discrete silicon carbide junction transistor designed for demanding applications. This device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 116 A at 25°C (Tc), with a maximum power dissipation of 577 W (Tc). The low on-resistance (Rds On) of 25 mOhm is achieved at 43 A and 20 Vgs. Key parameters include a gate charge (Qg) of 82 nC at 20 V and input capacitance (Ciss) of 2667 pF at 800 V. The device operates over an extended temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101, making it suitable for automotive and industrial power conversion systems. It is supplied in a PG-HDSOP-22 package, mounted via surface mount, and delivered on tape and reel. The gate drive voltage range is specified as 18V to 20V for Rds On, with absolute maximum ratings for Vgs at +25V and -10V.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 22-PowerBSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 43A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 577W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 13.7mA |
| Supplier Device Package | PG-HDSOP-22 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2667 pF @ 800 V |
| Qualification | AEC-Q101 |
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