AIMBG75R027M1HXTMA1
AIMBG75R027M1HXTMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 750 V 64A (Tj) 273W (Tc) Surface Mount PG-TO263-7
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Digi-Reel®Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tj) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 24.5A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 273W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 8.8mA |
| Supplier Device Package | PG-TO263-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1668 pF @ 500 V |
| Qualification | AEC-Q101 |
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