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AIMBG75R020M1HXTMA1

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AIMBG75R020M1HXTMA1

AIMBG75R020M1HXTMA1

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 750 V 81A (Tj) 326W (Tc) Surface Mount PG-TO263-7

Additional Information

Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C81A (Tj)
Rds On (Max) @ Id, Vgs18mOhm @ 34.1A, 20V
FET Feature-
Power Dissipation (Max)326W (Tc)
Vgs(th) (Max) @ Id5.6V @ 12.2mA
Supplier Device PackagePG-TO263-7
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Vgs (Max)+23V, -5V
Drain to Source Voltage (Vdss)750 V
Gate Charge (Qg) (Max) @ Vgs70 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2326 pF @ 500 V
QualificationAEC-Q101

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