AIMBG120R160M1XTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AIMBG120R160M1XTMA1 is a 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for demanding power applications. This discrete component features a continuous drain current of 17A at 25°C (Tc) and a maximum power dissipation of 106W (Tc). The low on-resistance of 200mOhm at 5A, 20V is achieved with a gate-source drive voltage range of 18V to 20V. Key parameters include a gate charge of 14 nC at 20V and input capacitance of 350 pF at 800V. The AIMBG120R160M1XTMA1 is housed in a PG-TO263-7-12 surface mount package, suitable for high-density designs. Operating across an extended temperature range of -55°C to 175°C (TJ), this device is AEC-Q101 qualified and manufactured with an Automotive grade. This SiC MOSFET is well-suited for use in electric vehicle powertrains, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 106W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 1.6mA |
| Supplier Device Package | PG-TO263-7-12 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 800 V |
| Qualification | AEC-Q101 |
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