AIMBG120R120M1XTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AIMBG120R120M1XTMA1 is a high-performance silicon carbide (SiC) Schottky barrier diode. Designed for demanding power electronic applications, this discrete component offers superior switching characteristics and reduced conduction losses compared to traditional silicon devices. With a 1200V blocking voltage and a 120A forward current rating, it is well-suited for power factor correction circuits, electric vehicle charging infrastructure, industrial motor drives, and renewable energy systems. The AIMBG120R120M1XTMA1 is supplied in a Tape & Reel (TR) package for automated assembly. Its robust SiC technology ensures excellent thermal performance and reliability in harsh operating environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
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