AIMBG120R080M1XTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolSiC™ AIMBG120R080M1XTMA1 is an N-Channel SiCFET discrete component designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) at 25°C of 30A. The AIMBG120R080M1XTMA1 utilizes Silicon Carbide technology, offering superior performance characteristics compared to traditional silicon-based devices. It is housed in a PG-TO263-7-12 package, suitable for surface mounting. This component operates across a wide temperature range of -55°C to 175°C. Applications for this device include power factor correction, inverter circuits, and power supplies within the electric vehicle and industrial power systems sectors.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-TO263-7-12 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
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