AIMBG120R060M1XTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AIMBG120R060M1XTMA1 is a high-performance N-Channel Silicon Carbide (SiC) Junction Transistor. This discrete power component offers a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 38A at 25°C (Tc). Featuring a low on-resistance (Rds On) of 75mOhm maximum at 13A and 20V (Vgs), and a maximum power dissipation of 202W (Tc), it is designed for demanding applications. The AIMBG120R060M1XTMA1 is packaged in a PG-TO263-7-12 (TO-263-8, D2PAK) surface mount configuration, supplied on a Tape & Reel (TR). With a gate charge (Qg) of 32 nC maximum at 20V (Vgs) and an input capacitance (Ciss) of 880 pF maximum at 800V (Vds), this device is suitable for automotive applications, achieving AEC-Q101 qualification. Its operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 13A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 202W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 4.3mA |
| Supplier Device Package | PG-TO263-7-12 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 800 V |
| Qualification | AEC-Q101 |
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