AIMBG120R040M1XTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolSiC™ AIMBG120R040M1XTMA1 is a high-performance N-channel Silicon Carbide (SiC) MOSFET designed for demanding power applications. Featuring a 1200 V drain-source voltage rating and a continuous drain current of 48 A at 25°C, this discrete power semiconductor offers superior efficiency and switching characteristics compared to traditional silicon devices. The SiCFET technology enables lower conduction losses and faster switching speeds, crucial for optimizing power density and thermal management.
This component is housed in a PG-TO263-7-12 (TO-263-8, D2PAK) surface-mount package, facilitating efficient thermal dissipation and integration onto printed circuit boards. The operating temperature range of -55°C to 175°C underscores its robustness for operation in challenging environments. The AIMBG120R040M1XTMA1 is suitable for various high-power conversion systems, including electric vehicle charging infrastructure, industrial power supplies, and renewable energy inverters. It is supplied in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A |
| FET Feature | - |
| Supplier Device Package | PG-TO263-7-12 |
| Drain to Source Voltage (Vdss) | 1200 V |
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