AIMBG120R030M1XTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel Silicon Carbide Discrete Power MOSFET, part number AIMBG120R030M1XTMA1, offers a 1200 V drain-source voltage and 70 A continuous drain current at 25°C. This surface mount device, packaged in a PG-TO263-7-12, features a maximum on-resistance of 38 mOhm at 27 A and 20 V. With a gate charge of 57 nC and input capacitance of 1738 pF, it operates across a temperature range of -55°C to 175°C. Designed for demanding applications, the AIMBG120R030M1XTMA1 is AEC-Q101 qualified and suitable for automotive power systems. Its 333 W power dissipation capability makes it a robust choice for high-power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 27A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
| Supplier Device Package | PG-TO263-7-12 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1738 pF @ 800 V |
| Qualification | AEC-Q101 |
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