AIMBG120R010M1XTMA1
SIC_DISCRETEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolSiC™ AIMBG120R010M1XTMA1 is a high-performance N-Channel SiC MOSFET designed for demanding power applications. This discrete component offers a 1200 V drain-source voltage and a continuous drain current capability of 187 A at 25°C. Engineered with Silicon Carbide technology, it delivers superior switching efficiency and thermal performance compared to traditional silicon devices. The PG-TO263-7-12 package facilitates surface mounting, making it suitable for compact power supply designs. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is well-suited for applications in electric vehicle charging, industrial motor drives, and renewable energy systems. The device is supplied in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 187A |
| FET Feature | - |
| Supplier Device Package | PG-TO263-7-12 |
| Drain to Source Voltage (Vdss) | 1200 V |
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