94-4796
MOSFET N-CH 55V 85A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number 94-4796, features a 55V drain-source breakdown voltage and supports a continuous drain current of 85A at 25°C. This device offers a low on-resistance of 11mOhm maximum at 43A and 10V Vgs, with a gate charge of 120 nC maximum at 10V. The input capacitance (Ciss) is 3210 pF maximum at 25V. Designed for surface mounting in a TO-263-3, D2PAK package, it can dissipate up to 180W at 25°C. Typical applications include automotive and industrial power management systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V |
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