94-4737
MOSFET N-CH 30V 33A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number 94-4737, is a surface-mount component designed for demanding applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 33A at 25°C (Tc). The Rds(on) is specified at a maximum of 31mOhm at 18A and 10V gate-source voltage. With a maximum power dissipation of 57W (Tc), this MOSFET utilizes advanced Metal Oxide technology and is packaged in a TO-252AA (DPAK) case. Key parameters include a gate charge (Qg) of 29nC at 10V and input capacitance (Ciss) of 750pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for power management solutions across various industries including automotive, consumer electronics, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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