94-4582
MOSFET P-CH 55V 31A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number 94-4582, is a surface-mount component designed for demanding applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 31A at 25°C (Tc). The Rds On is specified at a maximum of 60mOhm at 16A and 10V drive. Key parameters include a gate charge (Qg) of 63 nC typical at 10V and an input capacitance (Ciss) of 1200 pF maximum at 25V. The component offers significant power dissipation capabilities, rated at 110W at 25°C (Tc) and 3.8W at 25°C (Ta). The TO-263-3, D2PAK package facilitates efficient thermal management. This MOSFET is suitable for use in power management, automotive, and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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