94-2304
MOSFET N-CH 30V 116A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number 94-2304, features a 30V drain-source voltage and a continuous drain current of 116A at 25°C. This device offers a low on-resistance of 7mOhm at 60A and 10V Vgs, with a maximum power dissipation of 180W. The gate charge (Qg) is specified at 60 nC maximum at 4.5V Vgs, and input capacitance (Ciss) is 3290 pF maximum at 25V Vds. Designed for through-hole mounting in a standard TO-220AB package, this MOSFET operates across a temperature range of -55°C to 175°C. Applications include automotive systems and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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