94-2113
MOSFET N-CH 30V 116A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies 94-2113 is a N-Channel MOSFET from the HEXFET® series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 116A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 7mOhm at 60A and 10V, with a gate charge (Qg) of 60 nC at 4.5V. It has an input capacitance (Ciss) of 3290 pF at 25V. The 94-2113 is housed in a D2PAK surface mount package (TO-263-3, D2PAK) for efficient thermal management, capable of dissipating up to 180W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power control, and high-power switching systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 180W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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