64-9146
MOSFET N-CH 20V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number 64-9146, offers a 20V Drain-Source Voltage (Vdss) and 32A Continuous Drain Current (Id) at 25°C ambient, scaling to 180A at 25°C case temperature. This device features a low Rds(on) of 1.8mOhm maximum at 15A and 10V Vgs. Designed for surface mount applications, it utilizes the DirectFET™ Isometric MT package for enhanced thermal performance, dissipating up to 89W at 25°C case temperature. Key electrical parameters include a maximum Gate Charge (Qg) of 71 nC at 4.5V Vgs and Input Capacitance (Ciss) of 6580 pF at 10V Vds. The MOSFET operates across a temperature range of -40°C to 150°C (TJ). This component is suitable for use in power conversion and management applications across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6580 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
