64-6006PBF
MOSFET N-CH 300V 46A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number 64-6006PBF, features a 300V drain-source voltage (Vdss) and 46A continuous drain current (Id). This through-hole TO-247AC packaged device offers a maximum on-resistance (Rds On) of 59mOhm at 33A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 430W (Tc) and a gate charge of 247 nC at 10V, it is suitable for demanding applications. The operating temperature range is -40°C to 175°C (TJ). This component is utilized in power supply, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 247 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7370 pF @ 25 V |