64-4059PBF
MOSFET N-CH 40V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number 64-4059PBF, is a surface-mount component designed for demanding applications. This device features a 40V drain-source voltage and a continuous drain current capability of 42A at 25°C, with a maximum power dissipation of 90W. The low on-resistance of 9mOhm at 42A and 10V gate drive voltage, coupled with a gate charge of 45 nC, ensures efficient switching. The input capacitance (Ciss) is rated at 1510 pF maximum at 25V. Packaged in a TO-252AA (DPAK) surface-mount configuration, this MOSFET operates reliably across a temperature range of -55°C to 175°C. Its robust specifications make it suitable for use in automotive, industrial power control, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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