64-4051
MOSFET N-CH 55V 16A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number 64-4051, offers a 55V drain-source breakdown voltage and a continuous drain current capability of 16A at 25°C (Tc). This TO-252AA (DPAK) surface-mount device features a maximum on-resistance of 58mOhm at 9.6A and 10V Vgs. The device supports a gate-source voltage range of ±16V and has a threshold voltage of 3V at 250µA. Key parameters include a gate charge of 9.9 nC and input capacitance of 380 pF. With a maximum power dissipation of 35W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
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