64-2105PBF
MOSFET N-CH 40V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number 64-2105PBF, offers a 40V drain-source voltage rating and a continuous drain current capability of 75A at 25°C (Tc). This through-hole component features a low on-resistance of 3.7mOhm maximum at 75A and 10V gate drive. The device exhibits a gate charge of 150 nC maximum at 10V and an input capacitance (Ciss) of 4340 pF maximum at 25V. Designed for efficient power handling, it supports a maximum power dissipation of 200W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). The TO-262 package is suitable for applications in automotive, industrial power control, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
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