64-2096PBF
MOSFET N-CH 75V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel power MOSFET, part number 64-2096PBF. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain current (Id) of 160A at 25°C (Tc). With a maximum power dissipation of 300W (Tc) and a low on-resistance (Rds On) of 3.8mOhm at 110A and 10V, it is designed for high-power applications. The MOSFET utilizes N-Channel technology and is housed in a TO-263-7, D2PAK surface mount package. Key parameters include a gate charge (Qg) of 260 nC at 10V and input capacitance (Ciss) of 7580 pF at 25V. It operates across a temperature range of -55°C to 175°C (TJ). This device is suitable for use in power supply and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7580 pF @ 25 V |